Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si)
DC Field | Value | Language |
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dc.contributor.author | Kim, Tae-Hong | - |
dc.contributor.author | Jang, Chan-Oh | - |
dc.contributor.author | Seong, Han-Kyu | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.accessioned | 2021-09-17T05:40:33Z | - |
dc.date.available | 2021-09-17T05:40:33Z | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.issn | 1543-186X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49469 | - |
dc.description.abstract | We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 k Omega to 130 k Omega. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGER | - |
dc.title | Fabrication and Electrical Characterization of Heterojunction Mn-Doped GaN Nanowire Diodes on n-Si Substrates (GaN:Mn NW/n-Si) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s11664-009-0675-9 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.38, no.4, pp 505 - 510 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000263897000005 | - |
dc.citation.endPage | 510 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 505 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 38 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | Mn-doped GaN nanowires | - |
dc.subject.keywordAuthor | dielectrophoresis | - |
dc.subject.keywordPlus | DIELECTROPHORESIS | - |
dc.subject.keywordPlus | NANOTUBES | - |
dc.subject.keywordPlus | ALIGNMENT | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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