Optical and electrical transport properties in silicon carbide nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seong, Han-Kyu | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Lee, Jung-Il | - |
dc.contributor.author | Choi, Doo-Jin | - |
dc.date.accessioned | 2021-09-17T05:40:36Z | - |
dc.date.available | 2021-09-17T05:40:36Z | - |
dc.date.issued | 2004-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49472 | - |
dc.description.abstract | We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of <100 nm and lengths of several mum. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of <111>. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2x10(-2) Omega cm for 0 V of gate voltage and 15 cm(2)/(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties. (C) 2004 American Institute of Physics. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Optical and electrical transport properties in silicon carbide nanowires | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.1781749 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.85, no.7, pp 1256 - 1258 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000223233800055 | - |
dc.citation.endPage | 1258 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1256 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 85 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SIC THIN-FILMS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.