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Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, S.-Y. | - |
| dc.contributor.author | Hyung, J.-H. | - |
| dc.contributor.author | Lee, S.-K. | - |
| dc.date.accessioned | 2021-09-23T04:40:31Z | - |
| dc.date.available | 2021-09-23T04:40:31Z | - |
| dc.date.issued | 2008-05 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.issn | 1350-911X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49597 | - |
| dc.description.abstract | Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding similar to 1 mu A at low bias voltages. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1049/el:20080019 | - |
| dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.11, pp 695 - + | - |
| dc.description.isOpenAccess | N | - |
| dc.identifier.wosid | 000256437500027 | - |
| dc.citation.endPage | + | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 695 | - |
| dc.citation.title | ELECTRONICS LETTERS | - |
| dc.citation.volume | 44 | - |
| dc.type.docType | Article | - |
| dc.publisher.location | 영국 | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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