Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

Abstract

We report on the fabrication and the electrical characterization of n-channel silicon nanowire (SiNW) field-effect transistors (FETs), which were prepared using phosphorous (P)-ion implantation in the region of the source/drain in SiNWs at a (lose of 1 x 10(14) ions/cm(2) and an energy of 10 keV. The current-voltage characteristics of the P-implanted SiNW FET exhibit clear n-type characteristics. We also observed critical changes in the surface morphology on the SiNWs after annealing at temperatures above 950 degrees C.