Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Jang, Chan-Oh | - |
dc.contributor.author | Kim, Tae-Hong | - |
dc.contributor.author | Lee, Seung-Yong | - |
dc.contributor.author | Kim, Dong-Joo | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.accessioned | 2021-09-23T05:40:47Z | - |
dc.date.available | 2021-09-23T05:40:47Z | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49635 | - |
dc.description.abstract | We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission line model (TLM) method. Our results indicate that subsequently deposited Ni/Au ohmic contacts on SiCNWs had similar to 40 times lower specific contact resistances (SCRs) of 5.9 x 10(-6) +/- 8.8 x 10(-6) Omega cm(2) compared to the values of Ti/Au ohmic contacts (2.6 x 10(-4) +/- 3.4 x 10(-4) Omega cm(2)). We also conducted a comparison study of the electrical characteristics of top-gated SiCNW field-effect transistors (FETs) with two different ohmic contacts as used for ohmic contact studies. The electrical transport measurements on the SiCNW FET with Ni/Au ohmic contacts show much lower resistance contacts to SiC NWs and better FET performances than those for Ti/Au ohmic contact-based FETs. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0957-4484/19/34/345203 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.19, no.34 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000257676300005 | - |
dc.citation.number | 34 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 19 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | DEVICE APPLICATIONS | - |
dc.subject.keywordPlus | CARBIDE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | NICKEL | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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