The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires
DC Field | Value | Language |
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dc.contributor.author | Hwang, Chanoh | - |
dc.contributor.author | Hyung, Jung-Hwan | - |
dc.contributor.author | Lee, Seung-Yong | - |
dc.contributor.author | Jang, Chan-Oh | - |
dc.contributor.author | Kim, Tae-Hong | - |
dc.contributor.author | Choi, Pyung | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.date.accessioned | 2021-09-23T06:40:28Z | - |
dc.date.available | 2021-09-23T06:40:28Z | - |
dc.date.issued | 2008-05 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.issn | 1361-6463 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49651 | - |
dc.description.abstract | We report on the fabrication and characterization of Ti/Au Ohmic contacts to unintentionally doped gallium nitride (n-GaN) nanowires. The specific contact resistance and resistivity were determined to be similar to 1.1 x 10(-5) +/- 5 x 10(-6) Omega cm(2) and similar to 6.9 x 10(-3) +/- 3 x 10(-4) Omega cm, respectively, with a diameter of similar to 140 nm using a transmission line model (TLM). We also present the electrical characterizations of metal/GaN nano-Schottky diodes with four Schottky metals (Al, Ti, Cr and Au) on unintentionally doped GaN nanowires using current-voltage (I-V) characteristics at room temperature. We observed the abnormal electrical characteristics of GaN nano-Schottky diodes for each Schottky metal. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0022-3727/41/10/105103 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.41, no.10 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000255513600026 | - |
dc.citation.number | 10 | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 41 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | BARRIERS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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