Si nanowire p-FET with asymmetric source-drain I-V characteristics
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Lee, Seung-Yong | - |
dc.contributor.author | Rogdakis, Konstantinos | - |
dc.contributor.author | Jang, Chan-Oh | - |
dc.contributor.author | Kim, Dong-Joo | - |
dc.contributor.author | Bano, Edwige | - |
dc.contributor.author | Zekentes, Konstantinos | - |
dc.date.accessioned | 2021-09-24T03:40:31Z | - |
dc.date.available | 2021-09-24T03:40:31Z | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.issn | 1879-2766 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49773 | - |
dc.description.abstract | We report on the electrical characteristics and the effects of source/drain Schottky barrier heights (SBHs) in a lightly implanted silicon nanowire field-effect transistor (SiNW FET). We prepared the SiNW FETs by boron implantation with a dose of 1 x 10(12) ions/cm(2) and an energy of 10 keV. Our results indicated that the nature of the metal-contacts on the source/drain electrodes had a significant impact on the current-voltage characteristics for B-implanted SiNW FETs. The current-voltage (I-D-V-DS) characteristics for the B-implanted SiNW FETs with a symmetric IV behavior exhibited a clear p-channel FET behavior with a field-effect mobility of similar to 0.4 cm(2)/Vs and a hole concentration of similar to 1.7 x 10(17) cm(-1). A 2D ATLAS simulation (SILVACO Inc.)with two different Schottky barrierheights of source/drain contacts to the SiNW supported the experimental results well. (C) 2008 Elsevier Ltd. All rights reserved. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Si nanowire p-FET with asymmetric source-drain I-V characteristics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.ssc.2008.12.036 | - |
dc.identifier.bibliographicCitation | SOLID STATE COMMUNICATIONS, v.149, no.11-12, pp 461 - 463 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000263733300011 | - |
dc.citation.endPage | 463 | - |
dc.citation.number | 11-12 | - |
dc.citation.startPage | 461 | - |
dc.citation.title | SOLID STATE COMMUNICATIONS | - |
dc.citation.volume | 149 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Semiconductors | - |
dc.subject.keywordAuthor | Nanofabrication | - |
dc.subject.keywordAuthor | Electronic transport | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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