Single-crystalline diluted magnetic semiconductor GaN : Mn nanowires
DC Field | Value | Language |
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dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Seong, Han-Kyu | - |
dc.contributor.author | Chang, Joonyeon | - |
dc.contributor.author | Lee, Kyeong-Il | - |
dc.contributor.author | Park, Young-Ju | - |
dc.contributor.author | Kim, Ju-Jin | - |
dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | He, Rongrui | - |
dc.contributor.author | Kuykendall, Tevye | - |
dc.contributor.author | Yang, Peidong | - |
dc.date.accessioned | 2021-09-24T03:40:36Z | - |
dc.date.available | 2021-09-24T03:40:36Z | - |
dc.date.issued | 2005-06 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.issn | 1521-4095 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49779 | - |
dc.description.abstract | Current information technology relies on two independent processes: charge-based information processing (microprocessors) and spin-based data storage (magnetic hard drives).([1-5]) The prospect of simultaneously manipulating both charge and spin in a single semiconductor medium is provided by the exciting area of spintronics. Among many others, diluted magnetic semiconductors (DMSs) represent the most promising candidates for such applications. ([1-7]) Herein we report on the magneto- and optoelectronic properties of single-crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.01-0.09). These nanowires, which have diameters of similar to 10-100 nm and lengths of up to tens of micrometers, exhibit ferromagnetism with Curie temperatures (T(C)s) above 300 K and magnetoresistances (MRs) up to 250 K. Spin-dependent electron transport from single-nanowire transistors indicates the homogeneous nature of the ferromagnetic nanowires. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Single-crystalline diluted magnetic semiconductor GaN : Mn nanowires | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.200401706 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.17, no.11, pp 1351 - + | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000229718400004 | - |
dc.citation.endPage | + | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1351 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 17 | - |
dc.type.docType | Article | - |
dc.publisher.location | 독일 | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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