Fabrication of ion-implanted Si nanowire p-FETs

Abstract

We have successfully demonstrated p-type silicon nanowire field-effect transistors (Si NW p-FETs) prepared using B-ion implantation with a dose of 1 x 10(13) ions/cm(2) and an energy of 10 keV. The experimental I-D-V-DS characteristics for B-implanted Si NW FETs revealed a clear p-channel FET behavior with a hole mobility of similar to 6.9 cm(2)/(V.s), a hole concentration of similar to 1.1 x 10(19) cm(-3), and a transconductance of similar to 29 nS/mu m at a V-DS of 0.1V. The B-implanted Si NWs were annealed at a temperature of 950 degrees C for 30 and 60 s. The 2D-ATHENA and ATLAS software were used to accurately simulate the device fabrication process and the electrical performance, respectively.