Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
DC Field | Value | Language |
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dc.contributor.author | Kuykendall, Tevye | - |
dc.contributor.author | Pauzauskie, Peter | - |
dc.contributor.author | Lee, Sangkwon | - |
dc.contributor.author | Zhang, Yanfeng | - |
dc.contributor.author | Goldberger, Joshua | - |
dc.contributor.author | Yang, Peidong | - |
dc.date.accessioned | 2021-10-19T02:40:20Z | - |
dc.date.available | 2021-10-19T02:40:20Z | - |
dc.date.issued | 2003-08 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.issn | 1530-6992 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50365 | - |
dc.description.abstract | High-quality gallium nitride nanowires have been synthesized via metal-initiated metalorganic chemical vapor deposition for the first time. Excellent substrate coverage was observed for wires prepared on silicon, c-plane, and a-plane sapphire substrates. The wires were formed via the vapor-liquid-solid mechanism with gold, iron, or nickel as growth initiators and were found to have widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single-crystalline and were oriented predominantly along the [210] or [110] direction. Wires growing along the [210] orientation were found to have triangular cross-sections. Transport measurements confirmed that the wires were n-type and had electron mobilities of similar to65 cm(2)/V.s. Photoluminescence measurements showed band edge emission at 3.35 eV (at 5 K), with a marked absence of low-energy emission from impurity defects. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/nl034422t | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.3, no.8, pp 1063 - 1066 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000184892400015 | - |
dc.citation.endPage | 1066 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1063 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 3 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | CATALYTIC GROWTH | - |
dc.subject.keywordPlus | NANODEVICES | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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