Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
DC Field | Value | Language |
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dc.contributor.author | Lee, S.-K. | - |
dc.contributor.author | Zetterling, C.-M. | - |
dc.contributor.author | Ostling, M. | - |
dc.contributor.author | Palmquist, J.-P. | - |
dc.contributor.author | Hogberg, H. | - |
dc.contributor.author | Jansson, U. | - |
dc.date.accessioned | 2021-10-19T03:40:20Z | - |
dc.date.available | 2021-10-19T03:40:20Z | - |
dc.date.issued | 2000-07 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.issn | 1879-2405 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50379 | - |
dc.description.abstract | Low resistivity Ohmic contacts of epitaxial titanium carbide to highly doped n- (1.3 x 10(19) cm(-3)) and p- (>10(20) cm(-3)) type epilayer on 4H-SiC were investigated. The titanium carbide contacts were epitaxially grown using coevaporation with an e-beam for Ti and a Knudsen cell for C-60 in a UHV system. A comparison of epitaxial evaporated Ti Ohmic contacts on p(+) epilayer of 4H-SiC is also given. The as-deposited TiC Ohmic contacts showed a good Ohmic behavior and the lowest contact resistivity (rho(C)) was 7.4 x 10(-7) Ohm cm(2) at 200 degrees C for n-type, and 1.1 x 10(-4) Ohm cm(2) at 25 degrees C for p-type contacts. Annealing at 950 degrees C did not improve the Ohmic contact to n-type 4H-SiC, but instead resulted in an increase in rho(C) to 4.01 x 10(-5) Ohm cm(2) at 25 degrees C. In contrast to n-type, after annealing at 950 degrees C the specific rho(C) for p-type SiC reached its lowest value of 1.9 x 10(-5) Ohm cm(2) at 300 degrees C. Our results indicate that co-evaporated TiC contacts to n- and p-type epilayers of 4H-SiC should not require a higher post-annealing temperature, contrary to earlier works. Material characteristics, utilizing X-ray diffraction, Low energy electron diffraction, Rutherford backscattering spectrometry, transmission electron microscopy, and X-ray photoelectron spectroscopy measurements are also discussed. (C) 2000 Elsevier Science Ltd. All rights reserved. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/S0038-1101(00)00056-3 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.44, no.7, pp 1179 - 1186 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000087297100008 | - |
dc.citation.endPage | 1186 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1179 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 44 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Ohmic contacts | - |
dc.subject.keywordAuthor | contact resistivity | - |
dc.subject.keywordAuthor | epitaxial titanium carbide | - |
dc.subject.keywordAuthor | 4H-SiC | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | C-60 | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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