Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL)
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Kwon | - |
dc.contributor.author | Seong, Han-Kyu | - |
dc.contributor.author | Choi, Ki-Chul | - |
dc.contributor.author | Cho, Narn-Kyu | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Suh, Eun-Kyung | - |
dc.contributor.author | Nahm, Kee-Suk | - |
dc.date.accessioned | 2021-10-27T00:40:13Z | - |
dc.date.available | 2021-10-27T00:40:13Z | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.issn | 1662-9752 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/50747 | - |
dc.description.abstract | We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8 x 8 mm(2) silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 similar to 70 cm(2)/(VS)-S-.. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | TRANS TECH PUBLICATIONS LTD | - |
dc.title | Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL) | - |
dc.type | Article | - |
dc.identifier.doi | 10.4028/www.scientific.net/MSF.527-529.1549 | - |
dc.identifier.bibliographicCitation | SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, v.527-529, pp 1549 - 1552 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000244227200367 | - |
dc.citation.endPage | 1552 | - |
dc.citation.startPage | 1549 | - |
dc.citation.title | SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | - |
dc.citation.volume | 527-529 | - |
dc.type.docType | Proceedings Paper | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | e-beam lithography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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