High Performance Solution-Processed and Lithographically Patterned Zinc-Tin Oxide Thin-Film Transistors with Good Operational Stability
DC Field | Value | Language |
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dc.contributor.author | Park, Sung Kyu | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Kim, Hyun-Soo | - |
dc.contributor.author | Han, Jeong-In | - |
dc.date.accessioned | 2021-11-09T04:40:10Z | - |
dc.date.available | 2021-11-09T04:40:10Z | - |
dc.date.issued | 2009-04 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.issn | 1944-8775 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/51194 | - |
dc.description.abstract | We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 mu m) have shown a carrier mobility >5 cm(2)/V s with an on/off current ratio greater than 10(8) and a subthreshold slope < 1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations < 0.5-1 V after 1 h current and voltage bias stressing. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | High Performance Solution-Processed and Lithographically Patterned Zinc-Tin Oxide Thin-Film Transistors with Good Operational Stability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1149/1.3119037 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.7, pp H256 - H258 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000266207100024 | - |
dc.identifier.scopusid | 2-s2.0-69149104577 | - |
dc.citation.endPage | H258 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | H256 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | amorphous semiconductors | - |
dc.subject.keywordAuthor | Hall mobility | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | lithography | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | sol-gel processing | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | tin compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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