Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors
DC Field | Value | Language |
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dc.contributor.author | Subramanian, Sankar | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.contributor.author | Parkin, Sean R. | - |
dc.contributor.author | Podzorov, Vitaly | - |
dc.contributor.author | Jackson, Thomas N. | - |
dc.contributor.author | Anthony, John E. | - |
dc.date.accessioned | 2021-11-09T05:40:11Z | - |
dc.date.available | 2021-11-09T05:40:11Z | - |
dc.date.issued | 2008-03 | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.issn | 1520-5126 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/51204 | - |
dc.description.abstract | We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spincast solutions, leading to devices with maximum hole mobility greater than 1.0 cm(2)N s. In contrast, the triisopropylsilyl derivative forms large, high-quality crystals that could serve as the substrate for transistor fabrication. For this compound, mobility as high as 0.1 cm(2)N S Was measured on the freestanding crystal. | - |
dc.format.extent | 2 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/ja073235k | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.130, no.9, pp 2706 - 2707 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000253549800001 | - |
dc.identifier.scopusid | 2-s2.0-40949096935 | - |
dc.citation.endPage | 2707 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 2706 | - |
dc.citation.title | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
dc.citation.volume | 130 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | ORGANIC SEMICONDUCTOR | - |
dc.subject.keywordPlus | FUNCTIONALIZED ACENES | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | CARRIER MOBILITY | - |
dc.subject.keywordPlus | BUILDING-BLOCKS | - |
dc.subject.keywordPlus | SINGLE-CRYSTALS | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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