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Thermal Conductivity Anisotropy in Phonon Transport of Bi2Te3/Bi0.5Sb1.5Te3 Superlattice Film

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dc.contributor.authorKang, Soo-Young-
dc.contributor.authorPark, No-Won-
dc.contributor.authorLee, Won-Yong-
dc.contributor.authorKang, Min-Sung-
dc.contributor.authorKim, Gil-Sung-
dc.contributor.authorKoo, Sang-Mo-
dc.contributor.authorKoh, Jung-Hyuk-
dc.contributor.authorLee, Sang-Kwon-
dc.date.accessioned2022-01-04T02:41:07Z-
dc.date.available2022-01-04T02:41:07Z-
dc.date.issued2020-04-
dc.identifier.issn1555-130X-
dc.identifier.issn1555-1318-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/52876-
dc.description.abstractNanoscale superlattice thin films generally exhibit larger phonon and electron scattering at the interface in the direction of the cross-plane of the samples. Therefore, it is very important to further detailed study of espe-cially phonon transport of the superlattice films. Here, we report temperature dependent thermal conductivity anisotropy in phonon transport of Bi2Te3/Bi0.5Sb1.5Te3 superlattice thin films at 200-500 K. Thermal conductiv-ity of these thin films for in-and cross-plane thermal conductivities were determined to be approximately 0.74 and 0.4 W m(-1) K-1 at 200-500 K, respectively, clearly indicating similar to 185% suppression in-and cross-plane thermal conductivities of the superlattice thin films with a large anisotropic behavior. Such large anisotropy in the thermal conductivity can be attributed to enhanced phonon scattering occurring at the interface of the Bi2Te3 and Bi0.5Sb1.5Te3 layer.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleThermal Conductivity Anisotropy in Phonon Transport of Bi2Te3/Bi0.5Sb1.5Te3 Superlattice Film-
dc.typeArticle-
dc.identifier.doi10.1166/jno.2020.2757-
dc.identifier.bibliographicCitationJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.15, no.4, pp 463 - 467-
dc.description.isOpenAccessN-
dc.identifier.wosid000564139600006-
dc.citation.endPage467-
dc.citation.number4-
dc.citation.startPage463-
dc.citation.titleJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS-
dc.citation.volume15-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordAuthorPhonon Transport-
dc.subject.keywordAuthorThermal Conductivity-
dc.subject.keywordAuthorAnisotropy-
dc.subject.keywordAuthorSuperlattice Films-
dc.subject.keywordAuthor3-Omega Method-
dc.subject.keywordPlusBI0.5SB1.5TE3 THIN-FILMS-
dc.subject.keywordPlusTHERMOELECTRIC PROPERTIES-
dc.subject.keywordPlusBISMUTH TELLURIDE-
dc.subject.keywordPlusBI2TE3-
dc.subject.keywordPlusFIGURE-
dc.subject.keywordPlusMERIT-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
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