Temperature dependence on dry etching of Al2O3 thin films in BCl3/Cl-2/Ar plasma
- Authors
- Yang, Xue; Kim, Dong-Pyo; Um, Doo-Seung; Kim, Gwan-Ha; Kim, Chang-Il
- Issue Date
- Jul-2009
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- aluminium compounds; argon; boron compounds; chlorine; etching; plasma materials processing; silicon compounds; thin films; X-ray chemical analysis; X-ray photoelectron spectra
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.27, no.4, pp 821 - 825
- Pages
- 5
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 27
- Number
- 4
- Start Page
- 821
- End Page
- 825
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53020
- DOI
- 10.1116/1.3086642
- ISSN
- 0734-2101
1520-8559
- Abstract
- During the etching process, the wafer surface temperature is an important parameter which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the redeposition of reaction products on feature surfaces. In this study, the authors investigated that the effect of substrate temperature on the etch rate of Al2O3 thin film and selectivity of Al2O3 thin film over hard mask material (such as SiO2) thin film in inductively coupled plasma as functions of Cl-2 addition in BCl3/Ar plasma, rf power, and dc-bias voltage based on the substrate temperature in range of 10-80 degrees C. The elements existed on the surface were analyzed by energy dispersive x-ray and x-ray photoelectron spectroscopy.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53020)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.