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Pressure dependence of defect emissions and the appearance of pressure-induced deep centers in chalcopyrite alloys AgxCu1-xGaS2
- Issue Date
- Jan-2001
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.223, no.1, pp 307 - 311
- Pages
- 5
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC RESEARCH
- Volume
- 223
- Number
- 1
- Start Page
- 307
- End Page
- 311
- ISSN
- 0370-1972
1521-3951
- Abstract
- We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor AgxCu1-xGaS2 for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy concentration x - 0.25 deep levels were found to appear under pressure. Plausible explanations of our results have been proposed.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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