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Plasma-induced damage in PZT thin films etched by inductively coupled plasma

Authors
Kang, MGKim, KTKim, CI
Issue Date
Jul-2003
Publisher
ELSEVIER SCIENCE SA
Keywords
etching; Pt/Zr/Ti (PZT); ferroelectric properties; thin film; ferroelectric random access memory (FeRAM)
Citation
THIN SOLID FILMS, v.435, no.1-2, pp 222 - 226
Pages
5
Journal Title
THIN SOLID FILMS
Volume
435
Number
1-2
Start Page
222
End Page
226
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53060
DOI
10.1016/S0040-6090(03)00326-2
ISSN
0040-6090
1879-2731
Abstract
We investigated the etching damage induced by Ar/(Cl-2 + CF4) plasma and improvement in etching damage by O-2 annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of Cl-2 80%/CF4 20% with 20% Ar addition. The etching conditions were fixed at a substrate temperature of 30 degreesC, RF power of 700 W, DC bias voltage of -200 V and a chamber pressure of 15 mTorr. To improve the ferroelectric properties of PZT thin films,after etching, the samples were annealed for 10 min at 600 degreesC in O-2 atmosphere. After O-2 annealing, the remanent polarization-on-fatigue property was recovered to the characteristics of the as-deposited film. According to X-ray diffraction (XRD) analysis, an increase in (100) and (200) phases showed the improvement in structure of the PZT thin films after the O-2 annealing process. In addition, transmission electron microscope (TEM) images showed that the etched PZT surface is damaged by the bombardment of energetic particles, but that the damaged surface can be recovered by O-2 annealing. The results of electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES) showed that O-2 annealing supports the substitution of oxygen vacancies on the PZT surface by O atoms. This decrease. in oxygen vacancies improves the fatigue characteristics of PZT thin films. (C) 2003 Elsevier Science B.V. All rights reserved.
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