Etching properties of ZnS thin films in Cl-2/CF4/Ar plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, D.P. | - |
dc.contributor.author | Kim, C.I. | - |
dc.contributor.author | Kwon, K.H. | - |
dc.date.accessioned | 2022-01-10T03:40:49Z | - |
dc.date.available | 2022-01-10T03:40:49Z | - |
dc.date.issued | 2004-07 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.issn | 1879-2731 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53085 | - |
dc.description.abstract | The manganese-doped zinc sulfide (ZnS:Mn) films were investigated in terms of etch rates and selectivity with inductively coupled plasma (ICP). The changes of volume density of etching species in Cl-2/CF4/Ar plasma were investigated with optical emission spectroscopy (OES). OES analysis indicated that the maximum Cl emission intensity was obtained with the gas mixture of 10% addition to CF4(20%)/Ar(80%) plasma. The changes of chemical states on the surface were analyzed with X-ray photoelectron spectroscopy (XPS). XPS study indicated that Zn was formed non-volatile etch by products and remained on the surface after etching of ZnS:Mn (0.39 wt.%) in Cl-2/CF4/Ar plasma. The etch rate of ZnS was gradually increased up to 10% addition of Cl-2 then decreased furthermore with increasing Cl-2 contents from 20 to 30%. The increase of etch rate can be explained by the effect of chemical and physical etching process. (C) 2003 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Etching properties of ZnS thin films in Cl-2/CF4/Ar plasma | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2003.12.128 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.459, no.1-2, pp 131 - 136 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000222217100029 | - |
dc.identifier.scopusid | 2-s2.0-2942557007 | - |
dc.citation.endPage | 136 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 131 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 459 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | ZnS | - |
dc.subject.keywordAuthor | Cl-2/CF4/Ar | - |
dc.subject.keywordAuthor | optical emission spectroscopy (OES) | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy (XPS) | - |
dc.subject.keywordPlus | ELECTROLUMINESCENT DISPLAYS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SRS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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