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Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition

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dc.contributor.authorKim, K.T.-
dc.contributor.authorKim, C.I.-
dc.date.accessioned2022-01-11T02:42:27Z-
dc.date.available2022-01-11T02:42:27Z-
dc.date.issued2005-04-
dc.identifier.issn0921-5107-
dc.identifier.issn1873-4944-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53221-
dc.description.abstractThe effect of lanthanides (A= La, Eu, Ce, Dy, Yb)- substitution on the ferroelectric properties of bismuth titanate (Bi(3.25)A(0.75)Ti(3)O(12), BAT) thin films has been investigated. The structure and morphology of the films were analyzed using X-ray diffraction and scanning electron microscopy, respectively. After annealing at 700 degrees C, the BAT films exhibited a polycrystalline structure. As a increasing the ionic radius of the lanthanides element (Eu, Ce) with a smaller ionic radius than La in the pseudoperovskite layer, the BAT thin films showed well saturated P-E curves and the remanent polarization (2P(r)) values increased from 8.08 and 44 mu C/cm(2) at an applied voltage of 10 V. The BAT thin films exhibited no significant degradation of switching charge at least up to 5 x 10(9) switching cycles at a frequency of 100 kHz. Moreover, the BAT film capacitors have appeared good retention properties after 3 x 10(4) s at room temperature. (c) 2004 Elsevier B.V. All rights reserved.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER SCIENCE SA-
dc.titleEffect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition-
dc.typeArticle-
dc.identifier.doi10.1016/j.mseb.2004.12.035-
dc.identifier.bibliographicCitationMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.118, no.1-3, pp 229 - 233-
dc.description.isOpenAccessN-
dc.identifier.wosid000228514800049-
dc.identifier.scopusid2-s2.0-15344347071-
dc.citation.endPage233-
dc.citation.number1-3-
dc.citation.startPage229-
dc.citation.titleMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY-
dc.citation.volume118-
dc.type.docTypeArticle; Proceedings Paper-
dc.publisher.location네델란드-
dc.subject.keywordAuthorferroelectric properties-
dc.subject.keywordAuthordielectric properties-
dc.subject.keywordAuthorionic radius-
dc.subject.keywordAuthorlanthanides substitutions-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusMEMORIES-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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