Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, K.T. | - |
dc.contributor.author | Kim, C.I. | - |
dc.date.accessioned | 2022-01-11T02:42:27Z | - |
dc.date.available | 2022-01-11T02:42:27Z | - |
dc.date.issued | 2005-04 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.issn | 1873-4944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/53221 | - |
dc.description.abstract | The effect of lanthanides (A= La, Eu, Ce, Dy, Yb)- substitution on the ferroelectric properties of bismuth titanate (Bi(3.25)A(0.75)Ti(3)O(12), BAT) thin films has been investigated. The structure and morphology of the films were analyzed using X-ray diffraction and scanning electron microscopy, respectively. After annealing at 700 degrees C, the BAT films exhibited a polycrystalline structure. As a increasing the ionic radius of the lanthanides element (Eu, Ce) with a smaller ionic radius than La in the pseudoperovskite layer, the BAT thin films showed well saturated P-E curves and the remanent polarization (2P(r)) values increased from 8.08 and 44 mu C/cm(2) at an applied voltage of 10 V. The BAT thin films exhibited no significant degradation of switching charge at least up to 5 x 10(9) switching cycles at a frequency of 100 kHz. Moreover, the BAT film capacitors have appeared good retention properties after 3 x 10(4) s at room temperature. (c) 2004 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.mseb.2004.12.035 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.118, no.1-3, pp 229 - 233 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000228514800049 | - |
dc.identifier.scopusid | 2-s2.0-15344347071 | - |
dc.citation.endPage | 233 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 229 | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 118 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | ferroelectric properties | - |
dc.subject.keywordAuthor | dielectric properties | - |
dc.subject.keywordAuthor | ionic radius | - |
dc.subject.keywordAuthor | lanthanides substitutions | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.