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Etching characteristic of ZnO thin films in an inductively coupled plasma
- Authors
- Woo, J. C.; Kim, G. H.; Kim, J. G.; Kim, C. I.
- Issue Date
- Aug-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Etch; ZnO; ICP
- Citation
- SURFACE & COATINGS TECHNOLOGY, v.202, no.22-23, pp 5705 - 5708
- Pages
- 4
- Journal Title
- SURFACE & COATINGS TECHNOLOGY
- Volume
- 202
- Number
- 22-23
- Start Page
- 5705
- End Page
- 5708
- ISSN
- 0257-8972
1879-3347
- Abstract
- The etching characteristics of ZnO and etch selectivities of ZnO to SiO2 in CF4/Ar, Cl-2/Ar and BCl3/Ar plasma were investigated. The etch rate in CF4/Ar plasma was lower than that in Cl containing plasma. The maximum etch rates of ZnO were 129.3 nm/min at Cl-2 (80%) /Ar (20%) and 172.4 nm/min at BCl3 (80%) /Ar (20%). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 80% Cl-2 and/or BCl3 fraction in Cl-2/Ar and BCl3/Ar plasmas. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. The chemical states of etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). (C) 2008 Elsevier B.V. All rights reserved.
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