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Low Profile Multi-Slot Loaded Antenna With Enhanced Gain-to-Volume Ratio and Efficiency

Authors
Kim, Ye-BonKim, Jin-WooLee, Han Lim
Issue Date
Dec-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Antenna gain enhancement; high efficiency antenna; low-profile antenna; slot-loaded antenna; shorted patch antenna
Citation
IEEE ACCESS, v.8, pp 225407 - 225415
Pages
9
Journal Title
IEEE ACCESS
Volume
8
Start Page
225407
End Page
225415
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54004
DOI
10.1109/ACCESS.2020.3044611
ISSN
2169-3536
Abstract
A printed circuit board (PCB) implementable multi-slot loaded antenna with a low-profile air-gapped structure for both gain and efficiency enhancement is proposed. The proposed planar antenna is configured by the upper substrate with a radiation patch separated from the lower substrate consisting of a pair of matching pads and a ground plane by the air-gap. The radiation patch on the upper substrate is loaded by two rectangular slots and a single narrow slot with a symmetrically placed feed point and a shorting pin. The narrow slot on the center of the radiation patch with the shorting pin improves both gain and radiation efficiency. The pair of two additional rectangular slots increase the gain while maintaining the required air-gap very low. Further, the symmetric matching pads are integrated along the feed and shorting vias to improve the realized antenna gain for the whole operation band. As a result, the proposed structure obtains a high gain-to-volume ratio as well as the enhanced efficiency. The proposed structure was fabricated at 5.9 GHz with the overall volume of 1.08 lambda(0) x 1.08 lambda(0) x 0.05 lambda(0) (55 mm x 55 mm x2.7 mm) including the whole ground plane. The measured antenna gain was 9.4 dBi at 5.9 GHz verifying the high realized gain-to-volume ratio. Also, the measured half power beamwidths in E and H planes were about 72 degrees and 74 degrees respectively. Lastly, the measured 10-dB impedance bandwidth of the proposed structure showed approximately 5.5 %.
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Lee, Han Lim
창의ICT공과대학 (전자전기공학부)
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