Effects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shan, Fei | - |
dc.contributor.author | Lee, Jae-Yun | - |
dc.contributor.author | Kim, Han-Sang | - |
dc.contributor.author | Sun, Hao-Zhou | - |
dc.contributor.author | Choi, Seong Gon | - |
dc.contributor.author | Heo, Kwan-Jun | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.contributor.author | Kim, Sung-Jin | - |
dc.date.accessioned | 2022-01-28T00:40:57Z | - |
dc.date.available | 2022-01-28T00:40:57Z | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.issn | 2093-6788 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54530 | - |
dc.description.abstract | We report on a method for fabricating solution-processed triple-multi-stacked indium zinc oxide (IZO) thin-fi lm transistors(TFTs) at a low annealing temperature using an oxygen plasma treatment technique at diff erent RF power levels of 120 W,150 W, 180 W, and 210 W. The oxygen plasma post-treatment is an additional process to optimize the surface state of IZOfi lms and to improve the electrical performance of the TFT device after using a low-temperature solution process insteadof a high-temperature annealing process. The plasma-treated TFT device exhibits improved electrical performance, withmobility of 5.1 ± 0.5 cm 2 /Vs, an on/off ratio of 2.5 × 10 8 , a threshold voltage of 2.6 ± 1.3 V, and a subthreshold swing of0.6 ± 0.1 V/dec when the RF power is 150 W. Therefore, the multi-stacked activity structure and the low RF power plasmapost-treatment process provides a simple and effi cient fabrication method that reduces the processing temperature, improvesthe electrical properties, and can be widely used in fl exible electronic devices. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 대한금속·재료학회 | - |
dc.title | Effects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide Transistors | - |
dc.title.alternative | Effects of Oxygen Plasma Power on Electrical Characteristics in Multi-Stacked Indium Zinc Oxide Transistors | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | Electronic Materials Letters, v.17, no.3, pp 222 - 228 | - |
dc.identifier.kciid | ART002714292 | - |
dc.description.isOpenAccess | N | - |
dc.citation.endPage | 228 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 222 | - |
dc.citation.title | Electronic Materials Letters | - |
dc.citation.volume | 17 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Oxygen plasma · Multi-stacked IZO TFT · Solution process · RF plasma power | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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