Quasihydrostatic versus nonhydrostatic pressure effects on the electrical properties of NiPS3
- Authors
- Cui, Hengbo; Yun, Seohee; Lee, Kyeong Jun; Lee, Chanhyeon; Chang, Seo Hyoung; Lee, Yongjae; Lee, Hyun Hwi; Raju, Kalaivanan; Moovendaran, Kalimuthu; Sankar, Raman; Choi, Kwang-Yong
- Issue Date
- Dec-2021
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW MATERIALS, v.5, no.12
- Journal Title
- PHYSICAL REVIEW MATERIALS
- Volume
- 5
- Number
- 12
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54625
- DOI
- 10.1103/PhysRevMaterials.5.124008
- ISSN
- 2475-9953
- Abstract
- We report combined x-ray diffraction (XRD) and electrical transport studies of the van der Waals (vdW) insulator NiPS3 to elucidate a pressure-induced insulator-to-metal transition (IMT). On application of quasihydrostatic pressure, two successive structural transitions occur at 10 and 29.4 GPa, as evidenced by the XRD and resistivity measurements. The concomitant IMT with a monoclinic-to-trigonal structural transition near 29.4 GPa turns out to be a common feature of the MPS3 family (M=transition metals). Under uniaxial-like pressure, the critical pressure for IMT is drastically reduced to P = 12.5 GPa. These results showcase that the IMT is susceptible to strain and hydrostatic environments and that pressure offers a new venue to control a dimensional crossover in layered vdW materials.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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