Epitaxial growth and optical band gap variation of ultrathin ZnTe films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min Jay | - |
dc.contributor.author | Lee, Kyeong Jun | - |
dc.contributor.author | Kim, Hyun Don | - |
dc.contributor.author | Kim, Hyuk Jin | - |
dc.contributor.author | Choi, Byoung Ki | - |
dc.contributor.author | Lee, In Hak | - |
dc.contributor.author | Khim, Yeong Gwang | - |
dc.contributor.author | Heo, Jin Eun | - |
dc.contributor.author | Chang, Seo Hyoung | - |
dc.contributor.author | Choi, Eunjip | - |
dc.contributor.author | Chang, Young Jun | - |
dc.date.accessioned | 2022-02-10T03:44:29Z | - |
dc.date.available | 2022-02-10T03:44:29Z | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.issn | 1873-4979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/54936 | - |
dc.description.abstract | Zinc telluride (ZnTe) has attracted interests for its semiconducting, optoelectronic, and electrical switching properties. However, the growth mechanism of ultrathin epitaxial films is not well established. Here we present a systematic study of the growth ultrathin ZnTe films on GaAs (0 0 1) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction and synchrotron based high-resolution X-ray diffraction showed that both surface atomic ordering and single crystalline phase aligned to the substrate orientation with small variation of c-axis lattice in the ultrathin films. While the deviation of chemical compositions depended on the growth conditions, information on the variation of the band gap and in-gap states was obtained through spectroscopic ellipsometry analysis. Our study showed that single crystal ZnTe films can serve as a model system in the development of Ovonic threshold switching devices for cross-point device applications. © 2022 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier B.V. | - |
dc.title | Epitaxial growth and optical band gap variation of ultrathin ZnTe films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.matlet.2022.131725 | - |
dc.identifier.bibliographicCitation | Materials Letters, v.313 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000766056000002 | - |
dc.identifier.scopusid | 2-s2.0-85123030249 | - |
dc.citation.title | Materials Letters | - |
dc.citation.volume | 313 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | Epitaxial film | - |
dc.subject.keywordAuthor | GaAs substrate | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Optical band gap | - |
dc.subject.keywordAuthor | ZnTe | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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