Dual-Gate Multiple-Channel ZnO Nanowire Transistors

Abstract

We report on conventional multichannel ZnO nanowire field-effect transistors (FETs) operating in one device in a dual-gate mode. Our FETs were prepared by assembling ZnO nanowires on a Si substrate using an optimized dielectrophoresis technique with bottom-gate and top-gate FET structures. We observed that the enhancement of the electrical characteristics in FETs with top-gate mode operation results from a thinner gate oxide and top-gate geometry compared with FETs with bottom-gate mode operation. It was also verified that surface passivation strongly affected the electrical performance of ZnO nanowire FETs.