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Fabrication and integration of micro/nano-scale optical wire circuit arrays and devices for high-speed and compact optical printed circuit board (O-PCB) and VLSI photonic applications

Authors
Lee, E.-H.Lee, S.G.O, B.H.Park, S.G.Kim, K.H.Kang, J.K.Choi, Y.W.Song, S.H.
Issue Date
Aug-2005
Publisher
SPIE
Keywords
Microphotonics; Nanophotonics; Optical Interconnection; Photonic Crystal; Photonic Integration
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v.5897, pp 1 - 13
Pages
13
Journal Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
5897
Start Page
1
End Page
13
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56293
DOI
10.1117/12.623506
ISSN
0277-786X
Abstract
We report on the design, fabrication and integration of micro/nano-scale optical wire circuit arrays and devices for high-speed, compact, light-weight, low power optical printed circuit boards (O-PCBs) and VLSI photonic applications. The optical wires are formed in the form of waveguides by thermal embossing and ultraviolet (UV) radiated embossing of polymer materials. The photonic devices include vertically coupled surface emitting laser (VCSEL) microlasers, microlenses, 45-degree reflection couplers, directional couplers, arrayed waveguide grating structures, multimode interference (MMI) devices and photodetectors. These devices are optically interconnected and integrated for O-PCB assembly and VLSI micro/nano-photonics. The O-PCBs are to perform the functions of transporting, switching, routing and distributing optical signals on flat modular boards or substrates. We report on the result of the optical transmission performances of these assembled O-PCBs. For the design, fabrication, and VLSI integration of nanoscale photonic devices, we used photonic crystal structures and plasmonic metallic waveguide structures. We examined the bandwidth, power dissipation, thermal stability, weight, and the miniaturization and density of optical wires and the O-PCB module. Characteristics of these devices are also described.
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