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Lasing Characteristics of Optical Thyristor for Optical Logic Function
- Authors
- Kim, D.; Lee, H.; Choi, W.; Choi, Y.; Lee, S.; Woo, D.; Byun, Y.; Kim, J.; Kim, S.; Nakano, Y.
- Issue Date
- Mar-2003
- Citation
- Conference on Optical Fiber Communication, Technical Digest Series, v.86, pp 80 - 82
- Pages
- 3
- Journal Title
- Conference on Optical Fiber Communication, Technical Digest Series
- Volume
- 86
- Start Page
- 80
- End Page
- 82
- ISSN
- 0000-0000
- Abstract
- The waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure was demonstrated. To increase the efficiency of optical emission the single quantum well undoped laser was incorporated in the active layer of the WDOT-LD, to gave lasing characteristics at a wavelength of 1.5μM. The waveguide-type PnnN optical thyristors showed the nonlinear s-shape I-V and lasing characteristics. The lasing threshold current at 25°C and 10°C were 111 mA and 72.5 mA.
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