Time-dependent current-voltage curves during the forming process in unipolar resistance switching
DC Field | Value | Language |
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dc.contributor.author | Lee, S. B. | - |
dc.contributor.author | Yoo, H. K. | - |
dc.contributor.author | Chang, Seo Hyoung | - |
dc.contributor.author | Gao, L. G. | - |
dc.contributor.author | Kang, B. S. | - |
dc.contributor.author | Lee, M. -J. | - |
dc.contributor.author | Kim, C. J. | - |
dc.contributor.author | Noh, T. W. | - |
dc.date.accessioned | 2022-04-27T02:40:41Z | - |
dc.date.available | 2022-04-27T02:40:41Z | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56872 | - |
dc.description.abstract | We investigated the time-dependent current-voltage curves of the forming process in unipolar resistance switching. We applied triggered-voltage triangular-waveform (pulse-waveform) signals with varied sweep rate (amplitude) to Pt/SrTiOx/Pt capacitors. By investigating their temperature dependences, we found that the forming process was driven by two different mechanisms, depending on the sweep rate (amplitude) : a purely electrical dielectric breakdown and a thermally assisted dielectric breakdown. For the latter process, we observed precursory changes in the current I(t) before the forming process. By fitting the time-dependent precursory changes with I(t) = I-o -A exp (-t/tau), we suggest that the thermally activated migration of oxygen vacancies/ions could help the thermally assisted dielectric breakdown. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3552676] | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Time-dependent current-voltage curves during the forming process in unipolar resistance switching | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3552676 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.5 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000286988400078 | - |
dc.identifier.scopusid | 2-s2.0-79951498299 | - |
dc.citation.number | 5 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | NANOFILAMENTS | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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