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Resistance switching in electroformed Pt/FeOx/Pt structuresopen access
- Authors
- Lee, S.B.; Chae, S.C.; Chang, S.H.; Liu, C.; Jung, C.U.; Seo, S.; Kim, D.-W.
- Issue Date
- Oct-2007
- Publisher
- 한국물리학회
- Keywords
- resistance switching; iron oxides; electroforming
- Citation
- Journal of the Korean Physical Society, v.51, no.SUPPL. 2, pp S96 - S99
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 51
- Number
- SUPPL. 2
- Start Page
- S96
- End Page
- S99
- ISSN
- 0374-4884
1976-8524
- Abstract
- We report studies of resistance switching characteristics of Pt/FeOx/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and alpha-Fe2O3 phase was formed at annealing temperatures >= 400 degrees C. The electroforming process, usually occurring at 7 similar to 10 V, increased the conductivity of the structure significantly(> 10(2)) and brought About reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeO, films exhibited reliable memory switching behaviors.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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