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Highly aligned epitaxial nanorods with a checkerboard pattern in oxide films

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dc.contributor.authorPark, S.-
dc.contributor.authorHoribe, Y.-
dc.contributor.authorAsada, T.-
dc.contributor.authorWielunski, L. S.-
dc.contributor.authorLee, N.-
dc.contributor.authorBonanno, P. L.-
dc.contributor.authorO'Malley, S. M.-
dc.contributor.authorSirenko, A. A.-
dc.contributor.authorKazimirov, A.-
dc.contributor.authorTanimura, M.-
dc.contributor.authorGustafsson, T.-
dc.contributor.authorCheong, S.-W.-
dc.date.accessioned2022-05-06T09:40:07Z-
dc.date.available2022-05-06T09:40:07Z-
dc.date.issued2008-02-
dc.identifier.issn1530-6984-
dc.identifier.issn1530-6992-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/57379-
dc.description.abstractOne of the central challenges of nanoscience is fabrication of nanoscale structures with well-controlled architectures using planar thin-film technology. Herein, we report that ordered nanocheckerboards in ZnMnGaO4 films were grown epitaxially on single-crystal MgO substrates by utilizing a solid-state method of the phase separation-induced self-assembly. The films consist of two types of chemically distinct and regularly spaced nanorods with mutually coherent interfaces, similar to 4 x 4 x 750 nm(3) in size and perfectly aligned along the film growth direction. Surprisingly, a significant in-plane strain, more than 2%, from the substrate is globally maintained over the entire film thickness of about 820 nm. The strain energy from Jahn-Teller distortions and the film-substrate lattice mismatch induce the,coherent three-dimensional (3D) self-assembled nanostructure, relieving the volume strain energy while suppressing the formation of dislocations.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Chemical Society-
dc.titleHighly aligned epitaxial nanorods with a checkerboard pattern in oxide films-
dc.typeArticle-
dc.identifier.doi10.1021/nl072848s-
dc.identifier.bibliographicCitationNano Letters, v.8, no.2, pp 720 - 724-
dc.description.isOpenAccessN-
dc.identifier.wosid000253166200064-
dc.identifier.scopusid2-s2.0-40449107943-
dc.citation.endPage724-
dc.citation.number2-
dc.citation.startPage720-
dc.citation.titleNano Letters-
dc.citation.volume8-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordPlusPHASE-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusSTRAIN-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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