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The effect of the resistivity of ZnGa2O4:Mn phosphor screen on the emission characteristics of field emitter array

Authors
Kim, S.S.Cho, S.H.Yoo, J.S.Jo, S.H.Lee, J.D.
Issue Date
Aug-1997
Publisher
ELECTRONIC DISPLAY INDUSTRIAL RESEARCH ASSOCIATION KOREA
Citation
IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, pp 676 - 681
Pages
6
Journal Title
IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST
Start Page
676
End Page
681
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/57529
Abstract
The proper methodology to determine the resistivity of a powder phosphor screen is presented in this work. For validity, the resistivity of ZnGa2O4:Mn phosphor screen was experimentally determined. Then the relationships of luminance intensity with resistivity of phosphor screen are correlated, followled by a qualitative explanation. Reduction of resistivity of the phosphor makes for smaller voltage drop across the phosphor screen and subsequently gives rise to an increase in both total number and energy of the electrons hitting phosphor screen.
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