Temperature Dependence of Threshold Current of Transverse Single-Mode InGaAsP/InGaP Buried-Heterostructure Laser
- Authors
- Yoo, Jae Soo; Ko, Yongtae; Kim, Hansaeng; Pak, Georgui; Lim, Gabgyu; Kim, Taeil
- Issue Date
- May-1994
- Publisher
- IOP Publishing Ltd
- Keywords
- CHARACTERISTIC TEMPERATURE; HETEROJUNCTION; CARRIER LOSS; INGAASP INGAP LASER; AUGER RECOMBINATION
- Citation
- Japanese Journal of Applied Physics, v.33, no.5A, pp 2559 - 2562
- Pages
- 4
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 33
- Number
- 5A
- Start Page
- 2559
- End Page
- 2562
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/57537
- DOI
- 10.1143/JJAP.33.2559
- ISSN
- 0021-4922
1347-4065
- Abstract
- Separate-confinement-heterostructure single-quantum-well (SCH-SQW) InGaAsP/InGaP structures were grown on a (100) GaAs substrate by liquid-phase epitaxy (LPE) and then buried-heterostructure (BH) lasers were fabricated after mesa etching. The output power of laser diodes could be cw-operated near 50 mW without any kink in the transverse single mode. The measured values of a charateristic temperature T0 for BH InGaAsP/InGaP lasers were around 100 K for approximately 500 mum cavity length. This relatively low value compared to the AlGaAs/GaAs quantum-well lasers could be better explained in terms of carrier leakage over the heterojunction barrier rather than Auger recombination which is intrinsic to quaternary semiconductor materials.
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Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
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