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Temperature Rise at Mirror Facet of CW Semiconductor Lasers
- Authors
- Yoo, Jay S.; Lee, Hong H.; Zory, Peter
- Issue Date
- Mar-1992
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE JOURNAL OF QUANTUM ELECTRONICS, v.28, no.3, pp 635 - 639
- Pages
- 5
- Journal Title
- IEEE JOURNAL OF QUANTUM ELECTRONICS
- Volume
- 28
- Number
- 3
- Start Page
- 635
- End Page
- 639
- ISSN
- 0018-9197
1558-1713
- Abstract
- A relationship is derived for the temperature rise at the mirror facet of semiconductor lasers. The analytical result is based on the model of Henry et al. [1] as applied to CW lasers and a thermal model. The effects of active layer length and its thickness, surface recombination velocity, output intensity, and an effective thermal length are delineated for the temperature rise. A comparison with experimental results reported in the literature shows good agreement for the facet temperature rise. A byproduct is an approximate relationship for the temperature distribution along the lasing direction.
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