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Fundamental conduction cooling limits for sub-1 µm Ga2O3 devices integrated with diamond

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dc.contributor.authorKim, T.-
dc.contributor.authorPark, S.I.-
dc.contributor.authorSong, C.-
dc.contributor.authorLee, H.-
dc.contributor.authorCho, J.-
dc.date.accessioned2022-05-16T09:40:08Z-
dc.date.available2022-05-16T09:40:08Z-
dc.date.issued2022-08-
dc.identifier.issn0017-9310-
dc.identifier.issn1879-2189-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/57722-
dc.description.abstractBeta-phase gallium oxide (β-Ga2O3), as an ultrawide bandgap semiconductor, is promising for next generation power and radio frequency electronics. Its low thermal conductivity, however, poses a challenge to thermal management of devices composed of it, causing a reduced power performance as well as temperature-induced reliability problems. Several recent efforts have focused upon the impact of various device-level thermal management approaches, including integration with high-thermal-conductivity substrates (e.g., diamond and SiC) as a bottom-side passive heat extraction method, on the cooling performance of β-Ga2O3 devices. These efforts, however, have been restricted to cases where the Ga2O3 layer thicknesses are above 1 µm. Here, we address the fundamental conduction cooling limits for sub-1 µm β-Ga2O3 devices integrated with diamond via finite element simulations. A semi-classical transport theory for phonons interacting with interfaces is employed to systematically calculate the thickness-dependent thermal conductivity of the β-Ga2O3 layers with different crystallographic orientations for both cross-plane and in-plane directions. We find that the maximum power density of sub-1 µm β-Ga2O3 devices on diamond, particularly that of the 0.1 µm device, can reach up to 7.7 W mm–1 with a junction temperature limit of 200 °C, considering an optimal device orientation as well as best-case experimental Ga2O3/diamond thermal boundary conductance (TBC). As the Ga2O3/diamond TBC approaches the limit predicted by the diffuse mismatch model, the fundamental limit to the maximum power density of these devices can reach up to 8.6 W mm–1, which is comparable to those reported previously for costly augmented thermal management designs. Our findings suggest that the integration with diamond can fundamentally enhance the device-level cooling performance of Ga2O3 electronics, sub-1 µm devices in particular, and has thereby the potential to significantly reduce system-level cooling costs and packaging challenges. © 2022 Elsevier Ltd-
dc.language영어-
dc.language.isoENG-
dc.publisherElsevier Ltd-
dc.titleFundamental conduction cooling limits for sub-1 µm Ga2O3 devices integrated with diamond-
dc.typeArticle-
dc.identifier.doi10.1016/j.ijheatmasstransfer.2022.122864-
dc.identifier.bibliographicCitationInternational Journal of Heat and Mass Transfer, v.191-
dc.description.isOpenAccessN-
dc.identifier.wosid000792202400004-
dc.identifier.scopusid2-s2.0-85127460639-
dc.citation.titleInternational Journal of Heat and Mass Transfer-
dc.citation.volume191-
dc.type.docTypeArticle-
dc.publisher.location영국-
dc.subject.keywordAuthorDiamond-
dc.subject.keywordAuthorElectronics cooling-
dc.subject.keywordAuthorGallium oxide (Ga2O3)-
dc.subject.keywordAuthorPhonon heat conduction-
dc.subject.keywordAuthorThermal conductivity-
dc.relation.journalResearchAreaThermodynamics-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMechanics-
dc.relation.journalWebOfScienceCategoryThermodynamics-
dc.relation.journalWebOfScienceCategoryEngineering, Mechanical-
dc.relation.journalWebOfScienceCategoryMechanics-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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