Fundamental conduction cooling limits for sub-1 µm Ga2O3 devices integrated with diamond
DC Field | Value | Language |
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dc.contributor.author | Kim, T. | - |
dc.contributor.author | Park, S.I. | - |
dc.contributor.author | Song, C. | - |
dc.contributor.author | Lee, H. | - |
dc.contributor.author | Cho, J. | - |
dc.date.accessioned | 2022-05-16T09:40:08Z | - |
dc.date.available | 2022-05-16T09:40:08Z | - |
dc.date.issued | 2022-08 | - |
dc.identifier.issn | 0017-9310 | - |
dc.identifier.issn | 1879-2189 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/57722 | - |
dc.description.abstract | Beta-phase gallium oxide (β-Ga2O3), as an ultrawide bandgap semiconductor, is promising for next generation power and radio frequency electronics. Its low thermal conductivity, however, poses a challenge to thermal management of devices composed of it, causing a reduced power performance as well as temperature-induced reliability problems. Several recent efforts have focused upon the impact of various device-level thermal management approaches, including integration with high-thermal-conductivity substrates (e.g., diamond and SiC) as a bottom-side passive heat extraction method, on the cooling performance of β-Ga2O3 devices. These efforts, however, have been restricted to cases where the Ga2O3 layer thicknesses are above 1 µm. Here, we address the fundamental conduction cooling limits for sub-1 µm β-Ga2O3 devices integrated with diamond via finite element simulations. A semi-classical transport theory for phonons interacting with interfaces is employed to systematically calculate the thickness-dependent thermal conductivity of the β-Ga2O3 layers with different crystallographic orientations for both cross-plane and in-plane directions. We find that the maximum power density of sub-1 µm β-Ga2O3 devices on diamond, particularly that of the 0.1 µm device, can reach up to 7.7 W mm–1 with a junction temperature limit of 200 °C, considering an optimal device orientation as well as best-case experimental Ga2O3/diamond thermal boundary conductance (TBC). As the Ga2O3/diamond TBC approaches the limit predicted by the diffuse mismatch model, the fundamental limit to the maximum power density of these devices can reach up to 8.6 W mm–1, which is comparable to those reported previously for costly augmented thermal management designs. Our findings suggest that the integration with diamond can fundamentally enhance the device-level cooling performance of Ga2O3 electronics, sub-1 µm devices in particular, and has thereby the potential to significantly reduce system-level cooling costs and packaging challenges. © 2022 Elsevier Ltd | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Fundamental conduction cooling limits for sub-1 µm Ga2O3 devices integrated with diamond | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.ijheatmasstransfer.2022.122864 | - |
dc.identifier.bibliographicCitation | International Journal of Heat and Mass Transfer, v.191 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000792202400004 | - |
dc.identifier.scopusid | 2-s2.0-85127460639 | - |
dc.citation.title | International Journal of Heat and Mass Transfer | - |
dc.citation.volume | 191 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Diamond | - |
dc.subject.keywordAuthor | Electronics cooling | - |
dc.subject.keywordAuthor | Gallium oxide (Ga2O3) | - |
dc.subject.keywordAuthor | Phonon heat conduction | - |
dc.subject.keywordAuthor | Thermal conductivity | - |
dc.relation.journalResearchArea | Thermodynamics | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Mechanics | - |
dc.relation.journalWebOfScienceCategory | Thermodynamics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Mechanical | - |
dc.relation.journalWebOfScienceCategory | Mechanics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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