Perylene Diimide Derivative Engineering for Covering Interfacial Defects in Indoor Perovskite Optoelectronics
- Authors
- Lee, Junmin; Kim, Byung Gi; Wang, Dong Hwan
- Issue Date
- Feb-2023
- Publisher
- John Wiley and Sons Inc
- Keywords
- aliphatic amines; dark current density; detectivity; indoor perovskite optoelectronics; PDI-derivatives; PDINN; photoresponse
- Citation
- Solar RRL, v.7, no.3
- Journal Title
- Solar RRL
- Volume
- 7
- Number
- 3
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/59855
- DOI
- 10.1002/solr.202200937
- ISSN
- 2367-198X
- Abstract
- To fabricate efficient light sensing/energy conversion devices, the interfacial defects in perovskite devices must be controlled. Herein, an organic-small-molecule intermediate layer (consisting of PDINN; N,N'-bis(3-(3-(Dimethylamino)propylaminropyl)perylene-3,4,9,10-tetracarboxylic diimide) perylene-3,4,9,10-tetracarboxylic diimide (C40H46N6O4)) is deposited between the upper electrode and intermediate layer of a sensing device. The PDI-derivative has symmetrical aliphatic amine groups at both ends. The effects of the interfacial defect cover layer on the performance of the perovskite device due to the chemical and structural specificity of PDINN are investigated. The performance characteristics are determined under different illuminance conditions. © 2022 Wiley-VCH GmbH.
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