Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors
DC Field | Value | Language |
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dc.contributor.author | Kim, S.-H. | - |
dc.contributor.author | Jo, C.-H. | - |
dc.contributor.author | Bae, M.-S. | - |
dc.contributor.author | Ichimura, M. | - |
dc.contributor.author | Koh, Jung-Hyuk | - |
dc.date.accessioned | 2023-02-14T07:40:25Z | - |
dc.date.available | 2023-02-14T07:40:25Z | - |
dc.date.issued | 2023-01 | - |
dc.identifier.issn | 2187-0764 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/60546 | - |
dc.description.abstract | Owing to its wide bandgap (3.4 eV) and high electron mobility, GaN has attracted significant attention for applications in solar cells, power transistors, and high-electron-mobility transistors. Crystallized GaN thin film can be hardly prepared in thin film form by employing physical vapor deposition processes, such as reactive RF sputtering and pulsed laser deposition, because a high driving energy is required to deposit a thin film due to its high binding energy. Herein, GaN thin films were prepared by CO2 laser-assisted RF sputtering at a relatively low temperature of 200°C. The CO2 laser with a 10,600 nm wavelength shows excellent conversion efficiency from optical energy to thermal energy. At the optimized laser energy density of 0.98 W/mm2, GaN thin film can have a (0002) orientation with a bandgap energy of 3.26 eV. The crystalline, surface morphological, and optical properties of the fabricated GaN thin films were evaluated using X-ray diffraction, FE-SEM, X-ray photoelectron (XPS), and photoluminescence (PL) spectroscopy, and UV-vis spectrometry. The energy bandgap of the fabricated GaN thin film was measured using the Tauc plot and confirmed via PL. The film composition thus obtained was analyzed using XPS. © 2022 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of The Korean Ceramic Society and The Ceramic Society of Japan. | - |
dc.format.extent | 12 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Taylor and Francis Ltd. | - |
dc.title | Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1080/21870764.2022.2151102 | - |
dc.identifier.bibliographicCitation | Journal of Asian Ceramic Societies, v.11, no.1, pp 68 - 79 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000898399200001 | - |
dc.identifier.scopusid | 2-s2.0-85144077924 | - |
dc.citation.endPage | 79 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 68 | - |
dc.citation.title | Journal of Asian Ceramic Societies | - |
dc.citation.volume | 11 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | CO2 laser | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | RF-magnetron sputtering | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordPlus | STRUCTURAL-PROPERTIES | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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