Modeling of Optimized Lattice Mismatch by Carbon-Dioxide Laser Annealing on (In, Ga) Co-Doped ZnO Multi-Deposition Thin Films Introducing Designed Bottom Layers
DC Field | Value | Language |
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dc.contributor.author | Yun, J. | - |
dc.contributor.author | Bae, M.-S. | - |
dc.contributor.author | Baek, J.S. | - |
dc.contributor.author | Kim, Tae Wan | - |
dc.contributor.author | Kim, S.-J. | - |
dc.contributor.author | Koh, Jung Hyuk | - |
dc.date.accessioned | 2023-02-15T06:41:16Z | - |
dc.date.available | 2023-02-15T06:41:16Z | - |
dc.date.issued | 2023-01 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/60617 | - |
dc.description.abstract | In this study, modeling of optimized lattice mismatch by carbon-dioxide annealing on (In, Ga) co-doped ZnO multi-deposition thin films was investigated with crystallography and optical analysis. (In, Ga) co-doped ZnO multi-deposition thin films with various types of bottom layers were fabricated on sapphire substrates by solution synthesis, the spin coating process, and carbon-dioxide laser irradiation with post annealing. (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer showed the lowest mismatch ratio between the substrate and the bottom layer of the film. The carbon-dioxide laser annealing process can improve electrical properties by reducing lattice mismatch. After applying the carbon-dioxide laser annealing process to the (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer, an optimized sheet resistance of 34.5 kΩ/sq and a high transparency rate of nearly 90% in the visible light wavelength region were obtained. © 2022 by the authors. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI | - |
dc.title | Modeling of Optimized Lattice Mismatch by Carbon-Dioxide Laser Annealing on (In, Ga) Co-Doped ZnO Multi-Deposition Thin Films Introducing Designed Bottom Layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/nano13010045 | - |
dc.identifier.bibliographicCitation | Nanomaterials, v.13, no.1 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000908862900001 | - |
dc.identifier.scopusid | 2-s2.0-85145844357 | - |
dc.citation.number | 1 | - |
dc.citation.title | Nanomaterials | - |
dc.citation.volume | 13 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | (In, Ga) co-doped ZnO | - |
dc.subject.keywordAuthor | CO2 laser annealing | - |
dc.subject.keywordAuthor | FoM | - |
dc.subject.keywordAuthor | lattice mismatch | - |
dc.subject.keywordAuthor | TCO | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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