High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized With a Photo-Activated Metal Oxide Nanocluster Precursor
DC Field | Value | Language |
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dc.contributor.author | Jo, Jeong-Wan | - |
dc.contributor.author | Kim, Kyung-Tae | - |
dc.contributor.author | Facchetti, Antonio | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.available | 2019-01-22T12:29:53Z | - |
dc.date.issued | 2018-11 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/607 | - |
dc.description.abstract | High quality solution-derived amorphous alumina (a-Al2O3) dielectric has been achieved with [Al-13(mu(3)-OH)(6)(mu-OH)(18)(H2O)(24)](NO3)(15) (Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV-induced photochemical activation. The synergetic combination of an Al-13 nanocluster precursor and high-energetic photochemical activation enables the formation of highly dense a-Al2O3 thin films via an efficient dissociation and rearrangement of the nanocluster skeleton. The electrical characteristics of the nanocluster-based a-Al2O3 thin films were investigated in terms of their operative electronic conduction mechanism by comparing conventional nitrate-based and vacuum-deposited films. From these results, it was found that the leakage current density of solution-processed a-Al2O3 layers is largely affected by their precursor structures. Finally, to demonstrate the versatility of the high-quality nanocluster-based a-Al2O3 dielectrics, carbon nanotube and metal-oxide thin-film transistors were fabricated on low thermal budget stretchable and rigid substrates, respectively. | - |
dc.format.extent | 4 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized With a Photo-Activated Metal Oxide Nanocluster Precursor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2018.2870424 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.39, no.11, pp 1668 - 1671 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000448539100011 | - |
dc.identifier.scopusid | 2-s2.0-85053354299 | - |
dc.citation.endPage | 1671 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1668 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 39 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Aluminum oxide | - |
dc.subject.keywordAuthor | a-Al2O3 | - |
dc.subject.keywordAuthor | nanocluster | - |
dc.subject.keywordAuthor | photochemical activation | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PHOTOCHEMICAL ACTIVATION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | ALUMINUM | - |
dc.subject.keywordPlus | CLUSTER | - |
dc.subject.keywordPlus | TFTS | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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