Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gatingopen access
- Authors
- Han, Hyeon; Sharma, Arpit; Meyerheim, Holger L.; Yoon, Jiho; Deniz, Hakan; Jeon, Kun-Rok; Sharma, Ankit K.; Mohseni, Katayoon; Guillemard, Charles; Valvidares, Manuel; Gargiani, Pierluigi; Parkin, Stuart S.P.
- Issue Date
- Apr-2022
- Publisher
- American Chemical Society
- Keywords
- brownmillerite; ionic liquid gating; oxygen vacancy channel; strain; strontium cobaltite
- Citation
- ACS Nano, v.16, no.4, pp 6206 - 6214
- Pages
- 9
- Journal Title
- ACS Nano
- Volume
- 16
- Number
- 4
- Start Page
- 6206
- End Page
- 6214
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/61416
- DOI
- 10.1021/acsnano.2c00012
- ISSN
- 1936-0851
1936-086X
- Abstract
- Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO2.5 (BM-SCO), is insulating and an antiferromagnet. Moreover, BM-SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (H-SCO) or vertically (V-SCO) to the film's surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show that H-SCO (antiferromagnetic insulator, AFI) can be converted to P-SCO (ferromagnetic metal, FM) and subsequently to V-SCO (AFI) by the insertion and subtraction of oxygen throughout thick films via ILG. Moreover, these processes are independent of substrate-induced strain which favors formation of H-SCO in the as-deposited film. The electric-field control of the OVC channels is a path toward the creation of oxitronic devices. © 2022 The Authors. Published by American Chemical Society.
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