SiC Nanopowders-Incorporated Dual-Channel TiZnSnO/ZnSnO Thin Film Transistors

Abstract

In this study, we investigated the effect of incorporating silicon carbide (SiC) nanopowders (NPs) on the electrical properties of dual-channel TiZnSnO/ZnSnO (TZTO/ZTO) thin film transistors (TFTs) with different Ti molar ratios. Our results show that solution processed TZTO/ZTO TFT devices incorporating SiC NPs show a current (IDS @ VGS similar to 5 V) increase from similar to 5.56 x 10(6) to similar to 9.41 x 10(6) A. It was found that the addition of Ti on ZTO layers results in changing their carrier concentration due to the decrease of O2- ions, with a resulting decrease of the off-current. The on/off current ratio of the TFTs was as large as 7.22 x 10(3) at 0.01 M Ti molar ratio with SiC NPs.