Laser Etching Effects for Ag Electrodes on Flexible Indium Tin Oxide Thin Films

Abstract

A nano-second infrared (IR) laser with a wavelength of 1064 nm was employed to investigate the etching properties of Ag paste on flexible indium tin oxide (ITO)/PET thin films. The IR laser was employed to obtain the feasibility and effectiveness of etching Ag paste. Different types of IR laser can be used for aligning, evaporation, and the etching process depending on their wavelength and power. Because a laser has a coherent single wavelength with high power, it can be used for the etching process. Further, the power and position of any type of laser can be accurately controlled during the process. Even uniformly deposited Ag paste can be accurately removed without touching and affecting another layer on the flexible substrate. Spin-coated Ag paste on flexible ITO thin films can be etched accurately. We believe that 1064 nm IR laser can be the best tool for etching process applications in semiconductor technologies.