Morphology-Driven High-Performance Polymer Transistor-based Ammonia Gas Sensor
- Authors
- Yu, Seong Hoon; Cho, Jangwhan; Sim, Kyu Min; Ha, Jae Un; Chung, Dae Sung
- Issue Date
- Mar-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- ammonia sensor; high sensitivity; morphology control; field-effect transistor; buffer layer
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.10, pp 6570 - 6576
- Pages
- 7
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 10
- Start Page
- 6570
- End Page
- 6576
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/64321
- DOI
- 10.1021/acsami.6b00471
- ISSN
- 1944-8244
1944-8252
- Abstract
- Developing high-performance gas sensors based on polymer field-effect transistors (PFETs) requires enhancing gas-capture abilities of polymer semiconductors without compromising their high charge carrier mobility. In this work, cohesive energies of polymer semiconductors were tuned by strategically inserting buffer layers, which resulted in dramatically different semiconductor surface morphologies. Elucidating morphological and structural properties of polymer semiconductor films in conjunction with FET studies revealed that surface morphologies containing large two-dimensional crystalline domains were optimal for achieving high surface areas and creating percolation pathways for charge carriers. Ammonia molecules with electron lone pairs adsorbed on the surface of conjugated semiconductors can serve as efficient trapping centers, which negatively shift transfer curves for p-type PFETs. Therefore, morphology optimization of polymer semiconductors enhances their gas sensing abilities toward ammonia, leading to a facile method of manufacturing high-performance gas sensors.
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Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
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