Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films
- Authors
- Park, Chang-Yup; You, Chun-Yeol; Jeon, Kun-Rok; Shin, Sung-Chul
- Issue Date
- May-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.22
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 22
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/64945
- DOI
- 10.1063/1.4722928
- ISSN
- 0003-6951
1077-3118
- Abstract
- We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at. %) In2O3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. % Mo doping (7.1 emu/cm(3)), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. % Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In2O3 is ascribed to the indirect exchange interaction mediated by the charge carriers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722928]
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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