Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge
- Authors
- Jeon, Kun-Rok; Min, Byoung-Chul; Park, Youn-Ho; Lee, Hun-Sung; Park, Chang-Yup; Jo, Young-Hun; Shin, Sung-Chul
- Issue Date
- Oct-2011
- Publisher
- AMER INST PHYSICS
- Keywords
- cobalt alloys; composite materials; contact resistance; elemental semiconductors; germanium; Hanle effect; heavily doped semiconductors; iron alloys; magnesium compounds; spin polarised transport
- Citation
- APPLIED PHYSICS LETTERS, v.99, no.16
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 99
- Number
- 16
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65005
- DOI
- 10.1063/1.3648107
- ISSN
- 0003-6951
1077-3118
- Abstract
- We have investigated the temperature and bias dependence of the Hanle effect in a composite n-type Ge system consisting of a heavily doped surface layer and a moderately doped Ge substrate, using three-terminal Hanle measurements. A large spin signal of similar to 5.1 k Omega mu m(2) and a spin lifetime of similar to 105 ps are obtained at 300 K. The spin signal, spin lifetime, and their asymmetries with respect to the bias polarity have been measured over a temperature range from 5 K to 300 K. Intriguingly, an inverted Hanle effect, indicating the sign inversion of spin polarization in Ge, is observed at low temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3648107]
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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