Parametrical Study on the Preparation of an InAs/AlSb 2DEG Structure for Application to a High-mobility Inverted-doping HEMT
- Authors
- Lim, Ju Young; Shin, Sang Hoon; Song, Jin Dong; Choi, Won Jun; Han, Suk Hee; Yang, Hae Suk
- Issue Date
- Oct-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Molecular beam epitaxy; AlSb; InAs 2DEG; Inverted-doping HEMT
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.4, pp 1525 - 1529
- Pages
- 5
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 4
- Start Page
- 1525
- End Page
- 1529
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65181
- DOI
- 10.3938/jkps.55.1525
- ISSN
- 0374-4884
1976-8524
- Abstract
- We have investigated the change in the electron mobility of InAs/AlSb two-dimensional electron gas (2DEC) structures under various growth conditions. The optimum transport characteristics of the InAs/AlSb 2DEG are achieved when the InAs channel is grown to a proper thickness under a suitable arsenic flux with a modified shutter sequence and with an extra GaSb layer overlaid on the tipper AlSb layer of the channel. The resulting inverted-doping high-electron-mobility-transistor (HEMT) structure including an n-doped InAs layer under the InAs channel, is found to have a mobility as high as similar to 28,270 cm(2)/Vs at 300 K and similar to 160,300 cm(2)/Vs at 77 K. This value of mobility at 300 K is three times larger than that of previously reported for a InAs/AlSb inverted-doping HEMT and is comparable with conventional counterparts. Furthermore, this high-mobility InAs/AlSb inverted-doping HEMT is newly realized.
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