Molecular dynamics study of electromechanical nanotube random access memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, O.-K. | - |
dc.contributor.author | Kang, J.W. | - |
dc.contributor.author | Byun, K.R. | - |
dc.contributor.author | Lee, J.H. | - |
dc.contributor.author | Hwang, H.J. | - |
dc.date.accessioned | 2023-03-09T00:39:29Z | - |
dc.date.available | 2023-03-09T00:39:29Z | - |
dc.date.issued | 2005-05 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65508 | - |
dc.description.abstract | A nanoelectromechanical (NEM) switching device based on carbon nanotube (CNT) was investigated using atomistic simulations. The model schematics for a CNT-based three-terminal NEM switching device fabrication were presented. For the CNT-based three-terminal NEM switch, the interactions between the CNT-lever and the drain electrode or the substrate were very important. When the electrostatic force applied to the CNT-lever was the critical point, the CNT-lever was rapidly bent because of the attractive force between the CNT-lever and the drain; then, the total potential energy of the CNT-lever was rapidly increased and the interatomic potential energy of the CNT-copper was rapidly decreased. The energy curves for the pull-in and the pull-out processes showed the hysteresis loop that was induced by the adhesion of the CNT on the copper, which was the interatomic interaction between the CNT and the copper. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.title | Molecular dynamics study of electromechanical nanotube random access memory | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp 234 - 237 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-32144448706 | - |
dc.citation.endPage | 237 | - |
dc.citation.startPage | 234 | - |
dc.citation.title | 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings | - |
dc.type.docType | Conference Paper | - |
dc.subject.keywordAuthor | Carbon nanotube | - |
dc.subject.keywordAuthor | Molecular dynamics simulation | - |
dc.subject.keywordAuthor | Nanoelectromechanical switch | - |
dc.subject.keywordAuthor | Nanorelay | - |
dc.subject.keywordAuthor | Three-terminal switch | - |
dc.subject.keywordPlus | Hysteresis | - |
dc.subject.keywordPlus | Microelectromechanical devices | - |
dc.subject.keywordPlus | Molecular dynamics | - |
dc.subject.keywordPlus | Random access storage | - |
dc.subject.keywordPlus | Switching systems | - |
dc.subject.keywordPlus | Molecular dynamics simulation | - |
dc.subject.keywordPlus | Nanoelectromechanical switch | - |
dc.subject.keywordPlus | Nanorelay | - |
dc.subject.keywordPlus | Three-terminal switch | - |
dc.subject.keywordPlus | Carbon nanotubes | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.