Molecular dynamics study of electromechanical nanotube random access memory
- Authors
- Kwon, O.-K.; Kang, J.W.; Byun, K.R.; Lee, J.H.; Hwang, H.J.
- Issue Date
- May-2005
- Keywords
- Carbon nanotube; Molecular dynamics simulation; Nanoelectromechanical switch; Nanorelay; Three-terminal switch
- Citation
- 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp 234 - 237
- Pages
- 4
- Journal Title
- 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
- Start Page
- 234
- End Page
- 237
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65508
- ISSN
- 0000-0000
- Abstract
- A nanoelectromechanical (NEM) switching device based on carbon nanotube (CNT) was investigated using atomistic simulations. The model schematics for a CNT-based three-terminal NEM switching device fabrication were presented. For the CNT-based three-terminal NEM switch, the interactions between the CNT-lever and the drain electrode or the substrate were very important. When the electrostatic force applied to the CNT-lever was the critical point, the CNT-lever was rapidly bent because of the attractive force between the CNT-lever and the drain; then, the total potential energy of the CNT-lever was rapidly increased and the interatomic potential energy of the CNT-copper was rapidly decreased. The energy curves for the pull-in and the pull-out processes showed the hysteresis loop that was induced by the adhesion of the CNT on the copper, which was the interatomic interaction between the CNT and the copper.
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Collections - College of ICT Engineering > School of Electrical and Electronics Engineering > 1. Journal Articles
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