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The modeling and characterization of nano-scale MOSFET resistance
- Authors
- Lee, J.-H.; Lee, H.-J.; Lee, W.-H.; Kang, E.-S.; Lee, J.-Y.; Byun, K.-R.; Kang, J.-W.; Hwang, H.-J.; Kwon, O.-K.
- Issue Date
- May-2005
- Keywords
- Extraction; Methodology; Parasitic resistance; Quantification; Separation
- Citation
- 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp 343 - 346
- Pages
- 4
- Journal Title
- 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
- Start Page
- 343
- End Page
- 346
- ISSN
- 0000-0000
- Abstract
- The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure play a significant role and degrade the device performance. These other resistances need to be less than 10%-20% of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.
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