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Secondary ion mass spectrometry (SIMS) characteristics of various FSG capping layers

Authors
Lee, D.-W.Kim, N.-H.Kim, S.-Y.Chang, E.-G.
Issue Date
Sep-2004
Citation
Proceedings - Electrochemical Society, v.11, pp 171 - 195
Pages
25
Journal Title
Proceedings - Electrochemical Society
Volume
11
Start Page
171
End Page
195
URI
https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65557
ISSN
0000-0000
Abstract
To fill the gap of films for metal-to-metal space, High density plasma fluorinated silicate glass (HDP FSG) is used due to various advantages. However, FSG films can have critical drawbacks such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. These problems are generally caused by fluorine penetration out of FSG film. Hence, FSG capping layers such like SRO (Silicon Rich Oxide) are required to prevent fluorine penetration. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated through SIMS and FTIR analysis. As a result of SIMS analysis, SRO using ARC chamber and SiN film snowed good capability in blocking fluorine penetration. Moreover, the sameness in their FTIR profiles is the presence of Si-H bond at 2175-2300 cm-1. Therefore, we concluded that Si-H bond at 2175-2300 cm-1 of FSG capping layers plays a key role to block fluorine penetration as well as dangling bond.
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